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New original IRF9640PBF field effect tube P channel IRF9640 TO-220 MOSFET

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Port: SHENZHEN
Payment Terms: T/T,Western Union,paypal
Operating Temperature: -55°C ~ 150°C (TJ)
Place of Origin: China
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Model Number: IRF9640
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250uA
Drain to Source Voltage (Vdss): 200V
Brand: MOSFET P-CH 200V 11A TO-220AB
Brand Name: origin
Package / Case: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Shenzhen ZTWX Electronic Technology Co., Ltd.
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TYPE
DESCRIPTION
Categories
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Part Number
IRF9640