| Port: | SHENZHEN |
| Payment Terms: | T/T,Western Union,paypal |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Place of Origin: | China |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| FET Type: | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
| Model Number: | IRF9640 |
| Mounting Type: | Through Hole |
| Rds On (Max) @ Id, Vgs: | 500mOhm @ 6.6A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250uA |
| Drain to Source Voltage (Vdss): | 200V |
| Brand: | MOSFET P-CH 200V 11A TO-220AB |
| Brand Name: | origin |
| Package / Case: | TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Vgs (Max): | ±20V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
TYPE | DESCRIPTION |
Categories | Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix |
Series | - |
Packaging | Tube |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Part Number | IRF9640 |
